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| (R) STTH3006CW TURBO 2 ULTRA-FAST HIGH VOLTAGE RECTIFIER PRELIMINARY DATASHEET MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2x15 A 600 V 175 C 1.9 V 50 ns FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE. ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS. LOW INDUCTANCE, ALLOWS SIMPLIFIED LAYOUT. K A1 A2 TO-247 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 92C = 0.5 Per diode Per device tp = 10 ms sinusoidal Value 600 30 15 30 85 -65 +175 + 175 Unit V A A A C C Surge non repetitive forward current Storage temperature range Maximum operating junction temperature July 1999 - Ed: 3A 1/5 STTH3006CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case thermal resistance Per diode Total Value 2.2 1.35 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = 600 V Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 15 A per leg IF = 30 A total Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 1.3 x IF(AV) + 0.04 IF(RMS)2 Tj = 25C Tj = 125C Tj = 25C Tj = 125C 1.5 1.5 10 Min. Typ. Max. 100 400 2.4 1.9 2.4 1.9 V V Unit A DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A IRM Sfactor tfr VFP Qrr IF = 15 A dIF/dt = 120 A/s VFR = 1.1 x VF max VR = 400V IF = 15 A dIF/dt = -200 A/s Tj = 25C Tests Conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 125C 1 200 6 Tj = 125C 380 Tj = 25C Min. Typ. Max. 35 50 9.5 A ns V nC Unit ns VR = 400 V IF = 15 A dIF/dt = -200 A/s 2/5 STTH3006CW Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus current (per diode). PF(av)(W) 40 35 30 25 20 15 10 5 0 0 2 4 6 IF(av) (A) 8 10 12 =tp/T T IFM(A) = 0.1 = 0.2 = 0.5 200 100 =1 Tj=125C Maximum values Tj=125C Typical values Tj=25C Maximum values = 0.05 10 tp 14 16 18 VFM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dI F/dt (90% confidence, per diode). IRM(A) 20 18 16 14 12 10 8 6 4 2 0 VR=400V Tj=125C IF=IF(av) IF=2 x IF(av) Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 0.4 0.2 Single pulse = 0.2 = 0.1 IF=0.5 x IF(av) T tp(s) 1E-2 1E-1 0.0 1E-3 =tp/T tp dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 1E+0 Fig. 5: Reverse recovery time versus dI F /dt (90% confidence, per diode). Fig. 6: Reverse charges versus dIF/dt (90% confidence, per diode). trr(ns) 220 200 180 160 140 120 100 80 60 40 20 0 VR=400V Tj=125C IF=2 x IF(av) Qrr(nC) 900 800 700 600 500 400 300 200 100 0 VR=400V Tj=125C IF=2 x IF(av) IF=IF(av) IF=IF(av) IF=0.5 x IF(av) IF=0.5 x IF(av) dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH3006CW Fig. 7: Softness factor (tb/ta) versus dI F /dt (typical values, per diode). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125C). S factor 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF< 2 x IF(av) VR=400V Tj=125C 3.5 3.0 2.5 2.0 1.5 1.0 IRM S factor dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0.5 0.0 25 50 QRR Tj(C) 100 125 150 75 Fig. 9: Transient peak forward voltage versus dI F/dt (90% confidence, per diode). Fig. 10: Forward recovery time versus dIF /dt (90% confidence, per diode). VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0 tfr(ns) 300 VFR=1.1 x VF max. IF=IF(av) Tj=125C IF=IF(av) Tj=125C 250 200 150 100 50 dIF/dt(A/s) 0 50 100 150 200 250 300 dIF/dt(A/s) 0 0 50 100 150 200 250 300 4/5 STTH3006CW PACKAGE MECHANICAL DATA TO247 DIMENSIONS V REF. A Millimeters 4.85 2.20 0.40 1.00 3.00 2.00 2.00 3.00 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2.00 5 60 3.55 3.65 0.139 3.00 0.078 14.80 0.559 15.75 0.608 20.15 0.781 4.30 0.145 2.40 0.078 3.40 0.118 5.15 0.191 2.60 0.086 0.80 0.015 1.40 0.039 Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 Min. Typ. Max. Min. Typ. Max. V Dia. D E F F1 F2 F3 F4 G H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 H L L1 D F1 L1 L2 L3 L4 L5 M V V2 Dia. Ordering code STTH3006CW Marking STTH3006CW Package TO-247 Weight 4.36 g. Base qty 30 Delivery mode Tube Cooling method: C Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 |
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